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G01900 - SEMI G19 - Specification for Dip Leadframes Produced by Etching Revision:SEMI G19-0997 (Reapproved 0811) - Inactive A notch ground into the

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4.1
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Description

A notch ground into the edge of the wafer at a specified orientation provides a positive method for such alignment

本テスト方法には,必要とされるO2分析装置の仕様,O2分析装置を適切に使用するための標準的方法,および大気の漏洩源を特定するためのO2データ操作などが含まれる。

4-95 (first published)

and 3) back sheet and back surface layer

SEMI E87-0302 (technical revision)

G01900 - SEMI G19 - Specification for Dip Leadframes Produced by Etching Revision:SEMI G19-0997 (Reapproved 0811) - Inactive A notch ground into theNOTICE: This Standard or Safety Guideline has an Inactive Status because the conditions to maintain Current Status have not been met. Inactive Standards or Safety Guidelines are available from SEMI and continue to be valid for use. This Specification is a guideline for production of DIP leadframes for plastic molded semiconductor packages produced by the etching process. It is a design guideline for packaging engineers, etchers, and mold manufacturers

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