MF009500 - SEMI MF95 - Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer StdPbc-0998 Referenced SEMI StandardsSEMI M1 —

Referenced SEMI StandardsSEMI M1 — Specifications for Polished Single Crystal Silicon Wafers

SEMI G86-0217 (Reapproved 1122)

This Test Method utilizes the relationship between carbon concentration and the absorption coefficient of the infrared absorption band associated with substitutional carbon in silicon

This Standard covers physical interface of 300 mm AMHS interbay equipment only

this Test Method may be used in research and development of PV silicon materials manufacturing and crystalline and multicrystalline silicon growth processes

MF009500 - SEMI MF95 - Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer StdPbc-0998 Referenced SEMI StandardsSEMI M1 —This Test Method is a manual technique that requires the use of a dispersive infrared spectrophotometer. For this measurement, the resistivity of the substrate must be less than 0. 02 cm at 23C and the resistivity of the layer must be greater than 0. 1 cm at 23C. A brief description of the theory of this Test Method is given in Related Information 1. This technique is capable of measuring the thickness of both n and p type layers greater than 2 m